Question Solved1 Answer 3. For an ideal Si-SiO2 MOS diode with d- 10 nm, NA 5 x 1016 cm3, find the applied voltage and the electric field at the interface required to bring about strong inversion. HINT: the answer to #2 helps here.

Solution:(1)Given thatThe ideal Si_(-SiO)^(2) mas diode with their values like{:[d=10nm", "],[N_(A)=5xx10^(16)cm^(-3)". "],[phi_(ms)+phi_(B)-(theta_(Ss))/(cox)-(cos x)/(cox)=(Q_(B0))/(c_(0x))],[phi_(ms)" - applied gate voltage "],[phi_(B)=" surface potential "],[" Qss-trapped change in semiconductor "],[" Qox - trapped change under the oxide "],[" Q Bo - depletion charge "],[" Cox-capacitance associated with gate oxide "]:}The capacitance of the gate oxide:{:[c_(0x)=(epsilon_(a)epsilon_(gamma))/(d)],[=(8.85 xx10^(-14)xx3.9)/(10 xx10^(-7))],[=3.45 xx10^(-1)f//cm^(2)]:}assuming the gate is made of polysidiconphi_(ms)=phi_(m)-phi_(s)(2)The following figure shows the gate is made of polysilicon by the vaccum labelx_(i)- electan affinity{:[phi_(m)-x_(i)+Eg//2],[phi_(S)-x_(i)+Eg_(2)+(E_(i)-E_(f))],[phi_(S)-x_(j)+Eg/ ... See the full answer