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#4. SolutionrarrV_(G)=phi_(mS)+phi_(B)-(Q_(S))/(C_(0x))-(Q0x)/(C_(0)x)-(Q_(B0))/(Cox)whereV_(G)= applied gete roltegephi_(B)= surface potintial.QCs = Trapped charge in semiconductor.QOX = Trapped cherge under the oxide.QB_(0)= depletion chargeCox = Capacitance associated witt gate oxide.C_(0)x=(epsi_(0))/(d)epsi_(r)=(8.85 xx10^(-17)xx3.9)/(10 xx10^(-7))=3.45 xx10^(-7)flcm^(2).assuming gate is made of polysilicon.x_(i)= electron affinity.{:[phi_(m)=x_(i)+(Eg)/(2)],[phi_(s)=x_(i)+E_(x)+(E_(i)-E_(f))],[phi_(s)=x_(i)+(Eq)/(2)+0.0259 ln (5xx10^(6))/(1.5 xx10^(10))],[=x_(i)+(Eg)/(2)+0.389". "],[:.phi_(ms)=-0.389" volt. "],[" As ... See the full answer