# Question Solved1 Answercan someone explain this problem step by step, please. Thanks Consider a process technology for which Lmin​=0.18μm,t0x​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cox​ and kn′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDSmin​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​.Consider a process technology for which Lmin​=0.18μm,tox​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cax​ and kn′′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDS min ​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​.

DLKY9D The Asker · Electrical Engineering

can someone explain this problem step by step, please. Thanks

Transcribed Image Text: Consider a process technology for which Lmin​=0.18μm,t0x​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cox​ and kn′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDSmin​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​. Consider a process technology for which Lmin​=0.18μm,tox​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cax​ and kn′′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDS min ​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​.
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Transcribed Image Text: Consider a process technology for which Lmin​=0.18μm,t0x​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cox​ and kn′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDSmin​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​. Consider a process technology for which Lmin​=0.18μm,tox​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cax​ and kn′′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDS min ​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​.