Question Solved1 Answer can someone explain this problem step by step, please. Thanks Consider a process technology for which Lmin​=0.18μm,t0x​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cox​ and kn′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDSmin​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​.Consider a process technology for which Lmin​=0.18μm,tox​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cax​ and kn′′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDS min ​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​.

DLKY9D The Asker · Electrical Engineering

can someone explain this problem step by step, please. Thanks

Transcribed Image Text: Consider a process technology for which Lmin​=0.18μm,t0x​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cox​ and kn′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDSmin​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​. Consider a process technology for which Lmin​=0.18μm,tox​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cax​ and kn′′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDS min ​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​.
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Transcribed Image Text: Consider a process technology for which Lmin​=0.18μm,t0x​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cox​ and kn′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDSmin​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​. Consider a process technology for which Lmin​=0.18μm,tox​=4 nm,μn​=450 cm2/V⋅s, and Vt​=0.5 V. (a) Find Cax​ and kn′′​ (b) For a MOSFET with W/L=1.8μm/0.18μm, calculate the values of vOV​,vGS​, and vDS min ​ needed to operate the transistor in the saturation region with a current iD​=100μA. (c) For the device in (b), find the values of vOV​ and vGS​ required to cause the device to operate as a 1000−Ω resistor for very small vDS​.
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given alpha min =0.18 mumquad to x=4nmquadmu_(n):450 xx10^(-4)m^(2)//v-svt=0.5 Volt(a){:[" Cox: "=(t_(0)x)/(tax)=(3.960)/(t0x)],[cox=(3.9 xx8.854 xx10^(-12))/(4xx10^(-9))=8.63265 xx10^(-3)F],[cox=8.63265mf]:}k_(n)^(')=ln_(n)cox=450 xx10^(-4)xx8.63265 xx10^(-3)A//v^(2){:[=3884.6925 xx10^(-7)A//V^(2)],[=388.46925 xx10^(-6)A//V^(2)],[kn=388.469254=V^(2)]:}(b) quad(N)/(L)=(1.8 mum)/(0.18 mum)=10drain curront eduation 1 hat(n) saturation region{:[" IO: "-(1)/(2)mu_(n)cox((omega )/(L))(v_(Gs)-v_(t))^(2)],[=>quad[D=(1)/(2)k_(n)^(')((omega )/(L))(v_(as)-vt)^(2 ... See the full answer