Question Solved1 Answer Question (1): Calculate the diffusion parasitic Cdb of the drain of a unit-sized contacted nMOS transistor in a 65 nm process when the drain is at O V and again at Vpp = 1.0 V. Assume the substrate is grounded. The diffusion region conforms to the design rules with 2 = 25 nm (W = 42). The transistor characteristics are: C) = 1.5 fF/um?, M, = 0.3, Cosw = 0.1 fF/um, Ciswa = 0.4 fF/um, Musw = 0.20, Mjswg = 0.10, and yo = 0.6 V at room temperature. Dei Gate Po Cate-State Overlap MS Source D. org Dion AN Bulk Seur

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Transcribed Image Text: Question (1): Calculate the diffusion parasitic Cdb of the drain of a unit-sized contacted nMOS transistor in a 65 nm process when the drain is at O V and again at Vpp = 1.0 V. Assume the substrate is grounded. The diffusion region conforms to the design rules with 2 = 25 nm (W = 42). The transistor characteristics are: C) = 1.5 fF/um?, M, = 0.3, Cosw = 0.1 fF/um, Ciswa = 0.4 fF/um, Musw = 0.20, Mjswg = 0.10, and yo = 0.6 V at room temperature. Dei Gate Po Cate-State Overlap MS Source D. org Dion AN Bulk Seur
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Transcribed Image Text: Question (1): Calculate the diffusion parasitic Cdb of the drain of a unit-sized contacted nMOS transistor in a 65 nm process when the drain is at O V and again at Vpp = 1.0 V. Assume the substrate is grounded. The diffusion region conforms to the design rules with 2 = 25 nm (W = 42). The transistor characteristics are: C) = 1.5 fF/um?, M, = 0.3, Cosw = 0.1 fF/um, Ciswa = 0.4 fF/um, Musw = 0.20, Mjswg = 0.10, and yo = 0.6 V at room temperature. Dei Gate Po Cate-State Overlap MS Source D. org Dion AN Bulk Seur
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Ans:- we find a cnit-size diffusion contact is 4xx51, or 0.1 xx0.125 mum. The areais 0.0125xm^(2). and perimeter i2.0.35 ym plus 0.1mm. attong the channel.At zero bias.{:[C_(j" bd ")=1.5fF//rm^(2)],[c_(j" jdd ")=0.1fF//mum^(m)],[C_("j bdswg ")=0.4FF//mu m]:}Hence the total Capacitance are.{:[{:C_(aB)∣@v)=(0.0225mu^(2))(1.5(FF)/(mum^(2)))],[+0.35(m_(jsing))+0.1" (Cjbdsug) "],[=(0.0125 xx1.5(FF)/(F))+0.35(0.IFF)],[=quad+0.I(0.4 FF)],[=(0.01875+0.035+0.04)FF],[=0.09375FF]:}At drain voltage of VDD the Capacttamce redrce to{:[c_(db)(fv)=0.0125(1.5)(1+(1)/(**_(0)))^(-m_(j))],[+(0.35)(0.1.)+0.1(0.36)(1 ... See the full answer