Assume for all problems, Si has an intrinsic concentration of 10^10/cm3 at 300K.
a) Assume at 300K, you have a silicon with a bandgap of 1.1eV and Ef-Ev=0.2eV. What is the type (n or p) and the carrier concentration for the dominant carrier?
b) A bar of Silicon 1 cm long, 0.5 cm wide and 0.5 mm thick as a resistance of 200 ohms. It is doped with 5x10^15 /cm3 As atoms and T=300 K. Calculate the mobility.